 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| max 40 v collector current (d.c.) i c max 600 ma i c = 150ma; v ce = 10v > 40 h fe collector-emmitter voltage (open base) v ceo max 40 v collector-base voltage (open emitter) v cbo max 75 v emmitter base voltage (open collector) collector-base voltage (open emitter) v cbo max 75 transition frequency at f = 100mh z f t > 300 100 to 300 mw t amb = 25 o c collector current (d.c.) i c max 600 ma total power dissipation up to p tot max 250 mh z i c = 20ma; v ce = 20v symbol value unit v ebo max 6.0 v ic = 500ma; vce = 10v d.c. current gain collector-emitter voltage (open base) v ceo v v ebo max 6.0 v emitter-base voltage (open collector) max 250 mw tj max 150 o c storge temperature tstg -55 to +150 total power dissipation up to t amb = 25 o c junction temperature thermal resistance r th j-a k/w from junction to ambient 500 p tot o c unit value symbol npn silicon planar epitaxial transistors CMBT2222A ratings (at t a = 25 o c unless otherwise specified) limmiting values unit: inch (mm) pin configuration: 1. base 2. emitter 3. collector 1 2 3 absolute maximum ratings www.rectron.com 1 of 3
npn silicon planar epitaxial transistors CMBT2222A noise figure at r s = 1k ohm f < 4.0 db i c = 100ua; v ce = 10v; f= 1kh z pf i e = 0; v cb = 10v input capacitance at f = 1 mh z c i < 25 pf i e = 0; v eb = 0.5v v i c = 10ma; v ce = 10v; t amb = -55 o c i c = 0.1ma; v ce = 10v i c = 1ma; v ce = 10v h fe > 35 > 50 > 75 > 35 100 to 300 d.c. current gain i c = 150ma; v ce = 1v i c = 500ma; v ce = 10v > 40 > 50 transition frequency at f = 100 mh z i c = 20ma; v ce = 20v i c = 500ma; i b = 50 m a < 1.0 < 2.0 v cesat v besat breakdown voltages i c = 0; i e = 10u a v v i c = 150ma; i b = 15 m a v cesat < 300 mv v besat 0.6 to 1.2 v na base current i bex < 20 na with reverse biased emitter junction v fb = 3v; v ce = 60v collector cut-off current i cex < 10 i e = 0; v cb = 60v i cbo < 0.01 i cbo i c = 150ma; v ce = 10v f t > 300 mh z ua i e = 0; v cb = 60v; t j = 125 o c emitter-base cut-off current i ebo < 10 na i c = 0; v eb = 3 v v eb = 3 v; v ce = 60v symbol i c = 1.0ma; i b = 0 i c = 100ua; i e = 0 v (br)ceo v (br)cbo i c = 10ma; v ce = 10v output capacitance at f = 1 mh z c o < 8.0 saturation voltage < 10 value unit v (br)ebo > 40 > 75 > 6.0 characteristics (at tj=25 o c unless otherwise specified) www.rectron.com 2 of 3 npn silicon planar epitaxial transistors CMBT2222A td ns tr ts tf fall time < 60 < 25 turn-off time switched from ic= 150ma storage time < 225 switching times (between 10% and 90% levels) turn-on time switched to i c = 150ma delay time < 10 rise time www.rectron.com 3 of 3 |
Price & Availability of CMBT2222A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |